Transcend TS1TSSD470N 2.5-inch 1TB SATA III Internal SSD

Transcend TS1TSSD470N 2.5-inch 1TB SATA III Internal SSD

Transcend's SSD470N features a SATA III 6Gb/s interface and state-of-the-art 3D NAND technology, which allows 112 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 96 layers, this density breakthrough greatly improves storage efficiency. Transcend's SSD470N comes with a powerful controller and a DRAM cache, ensuring data can be written to the flash over extended periods without compromising performance. The SSD470N is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles and an extended operating temperature ranging from -20℃~75℃.

Firmware Features

• Dynamic thermal throttling
• Built-in LDPC ECC (Error Correction Code) functionality
• Advanced Global Wear-Leveling and Block management for reliability
• Advanced Garbage Collection
• Early Move
• Supports S.M.A.R.T. function to conduct health monitoring, analysis, and reporting for storage devices
• TRIM command for better performance
• NCQ command for better performance
• Full drive encryption with Advanced Encryption Standard (AES) (optional)
• Power-saving DevSleep (Device Sleep) mode (optional)

Hardware Features

• Compliant with RoHS 2.0 standards
• DDR3 DRAM Cache embedded
• Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
• Anti-sulfur technology implemented to prevent sulfurization in the environment
• Power Shield (PS) to ensure data transfer integrity and minimize data corruption in the drive during an abnormal power outage
• Extended Temp. (-20°C ~ 75°C) and Wide Temp. (-40°C ~ 85°C) options available

Specifications:

Dimensions: 100 mm x 69.85 mm x 6.8 mm (3.94" x 2.75" x 0.27")

Weight: 54 g

Form Factor: 2.5"

Bus Interface: SATA III 6Gb/s

Capacity: 1 TB

Flash Type: 112-layer 3D NAND flash

Sequential Read/Write (CrystalDiskMark)

Read: Up to 560 MB/s

Write: Up to 510 MB/s

4K Random Read/Write (IOmeter)

Read: Up to 84,000 IOPS

Write: Up to 70,000 IOPS